 |
|
July 26,
2010
|
|
Vishay Siliconix Releases Industry’s Smallest and Thinnest N-Channel Chipscale Power MOSFET With 0.64-mm2 Area
|
|
July 12,
2010
|
|
New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.555-Ω On-Resistance and Improved Gate Charge of 48 nC in
TO-220,TO-220 FULLPAK, and D²PAK Packages
|
|
July 01,
2010
|
|
New Vishay Siliconix ThunderFET™ Power MOSFET is Industry’s First 80-V MOSFET with On-Resistance Specified at 4.5-V Gate Drive,
with Value of 8.5 mΩ
|
|
June 11,
2010
|
|
Vishay Introduces Streaming Video Highlighting the SiZ700DT TrenchFET® Asymmetric Power MOSFET in the PowerPAIR® Package on
Website
|
|
May 03,
2010
|
|
Vishay Siliconix Introduces First 30-V P-Channel TrenchFET® Gen III Power MOSFET in PowerPAK® 1212-8 Package
|
|
April 23,
2010
|
|
Vishay Siliconix Introduces First P-Channel TrenchFET® Gen III Power MOSFET in Chipscale MICRO FOOT® Package
|
|
April 08,
2010
|
|
Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Dual 12-V Power MOSFET; New Device Lowers On-Resistance
Up to 32 % in 2-mm by 2-mm Footprint Area
|
|
April 01,
2010
|
|
New 500-V Vishay Siliconix N-Channel Power MOSFET Features Low trr of 63 ns, Qrr of 114 nC, and On-Resistance of 1.0 O at
10 V
|
|
January 22,
2010
|
|
New 600-V Vishay Siliconix Super Junction FET™ Power MOSFETs Feature 0.190-Ω On-Resistance in TO-220, TO-220F, TO-247, and
TO-263 Packages
|
|
December 21,
2009
|
|
Vishay Siliconix 12-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 27 mΩ at 4.5 V
to 130 mΩ at 1.5 V in Ultra-Small 1.6-mm by 1.6-mm Footprint Area
|
|
November 18,
2009
|
|
Vishay Siliconix 20-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 18 mΩ at 4.5 V
to 65 mΩ at 1.8 V in Compact 2-mm by 2-mm Footprint Area
|
|
October 16,
2009
|
|
Vishay’s New 1-mm by 1-mm Maximum MICRO FOOT® Devices Are Industry’s Smallest Chipscale MOSFETs; Include First Device Under
1.2 mm2 with 12-V Gate-to-Source Voltage
|
|
September 10,
2009
|
|
Latest Vishay Siliconix Billion-Cell Per Square Inch P-Channel TrenchFET® Gen III Power MOSFET Offers Industry-Low On-Resistance
in PowerPAK® SC-75
|
|
August 21,
2009
|
|
Vishay Launches 60-V TrenchFET Power MOSFET with Industry-First 6.1 Milliohms On-Resistance in SO-8 Size Package
|
|
August 14,
2009
|
|
Vishay Siliconix Extends Family of N-Channel TrenchFET® Power MOSFETs in Compact PowerPAK® SC-75 Package to Offer 8-V to 30-V
VDS Range
|
|
August 10,
2009
|
|
Vishay’s New SkyFET® Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance in SO-8 with TrenchFET®
Gen III Technology
|
|
July 29,
2009
|
|
New 500-V Vishay Siliconix Power MOSFETs Feature 0.270-Ω On-Resistance in TO-220, TO-220F, and TO-247 Packages
|
|
July 24,
2009
|
|
New Vishay Siliconix 12-V TrenchFET® Gen III Power MOSFET Features Industry-Best 1.2-mΩ Maximum On-Resistance at 10 V and
1.7 mΩ at 4.5 V
|
|
June 25,
2009
|
|
Vishay Siliconix 30-V P-Channel TrenchFET® Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance
in SO-8 Footprint Area
|
|
June 17,
2009
|
|
Vishay Siliconix Releases Industry's First Asymmetric Dual TrenchFET® Power MOSFET in New PowerPAIR™ 6-mm by 3.7-mm Package
|
|
May 11,
2009
|
|
Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for 3.3-mm
by 3.3-mm Footprint Area of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V
|
|
April 30,
2009
|
|
Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Ultra-Small Packages, Lowering On-Resistance Up to 44
% With New Dual 20-V Power MOSFET in 2-mm by 2-mm Footprint Area
|
|
April 01,
2009
|
|
Vishay Siliconix TrenchFET® Gen III Power MOSFETs Honored with EN-Genius Product of the Year Award
|
|
March 25,
2009
|
|
Vishay’s SiR440DP TrenchFET® Gen III Power MOSFET Chosen as Product of the Year by Electronic Products China Magazine
|
|
March 04,
2009
|
|
Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for SO-8
Footprint of 1.9 mΩ at 10 V and 2.5 mΩ at 4.5 V
|
|
January 07,
2009
|
|
Vishay Siliconix Releases Industry’s First 190-V N-Channel Power MOSFET Plus 190-V Co-Packaged Power Diode With Compact 2-mm
by 2-mm Footprint and Low 0.75-mm Profile
|
|
December 17,
2008
|
|
Vishay Siliconix Releases New 20-V and 30-V P-Channel TrenchFET® Power MOSFETs With Industry’s Lowest On-Resistance in the
SO-8 Footprint Down to 3.3 mΩ at 10 V and 5.5 mΩ at 4.5 V
|
|
December 12,
2008
|
|
Vishay Siliconix Releases New 20-V N-Channel Power MOSFET Plus Schottky Diode With Industry’s Smallest Footprint of 1.6 mm
by 1.6 mm
|
|
December 03,
2008
|
|
Siliconix Releases First 20-V and 30-V N-Channel TrenchFET® Gen III Power MOSFETs With TurboFET™ Technology For Low Switching
Losses and Faster Switching
|
|
November 19,
2008
|
|
New Vishay Siliconix 20-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.0-mΩ On-Resistance at 4.5 V and
1.55 mΩ at 10 V
|
|
October 22,
2008
|
|
New Siliconix 25-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.1-mΩ On-Resistance at 4.5 V and 1.7 mΩ
at 10 V in PowerPAK® SO-8 Package
|
|
September 24,
2008
|
|
Vishay Releases Industry’s First 30-V Monolithic Power MOSFET and Schottky Diode With Double-Sided Cooling
|
|
August 20,
2008
|
|
New Vishay Siliconix 8-V to 30-V P-Channel PowerPAK SC-75 Power MOSFETs Feature On-Resistance as Low as 0.052 Ohms in 1.6-mm
by 1.6-mm Footprint Area
|
|
June 18,
2008
|
|
Vishay Releases New 20-V P-Channel TrenchFET® Power MOSFET in MICRO FOOT® Chipscale Package With Industry’s Smallest Footprint
of 1.2-mm by 1.0-mm
|
|
May 28,
2008
|
|
New Vishay Siliconix Power MOSFETs in Compact 2-mm by 2-mm PowerPAK® SC-70 Package Offer Half the Size of TSOP-6 With Comparable
On-Resistance Down to 11 mΩ
|
|
April 09,
2008
|
|
Vishay Releases New 20-V P-Channel TrenchFET® Power MOSFET in MICRO FOOT® Chipscale Package With Industry’s Thinnest Profile
of 0.59-mm
|
|
March 26,
2008
|
|
New 30-V TrenchFET Power MOSFET with Industry-Best Maximum 2.25-Milliohm On-Resistance at a 4.5-V Gate Drive Voltage is First
Device in Vishay Siliconix TrenchFET® Gen III Family
|
|
December 12,
2007
|
|
Vishay’s Monolithic SkyFET™ Power MOSFET and Schottky Diode Enables 6 % Improvement in DC/DC Converter Efficiency
|
|
October 10,
2007
|
|
Next-Generation Vishay Siliconix P-Channel TrenchFET® Power MOSFETs Offer Industry-Low On-Resistance Down To 29 Milliohms
|
|
August 15,
2007
|
|
Vishay Launches Industry-First Power MOSFETs Specifying On-Resistance at 1.2-V Gate-to-Source Voltage
|
|
July 16,
2007
|
|
New Vishay Siliconix PowerPAK® ChipFET® Power MOSFETs Replace TSOP-6 Devices with 75 % Lower Thermal Resistance in 33 % Smaller
Footprint
|
|
January 22,
2007
|
|
Vishay’s New 20-V to 40-V PolarPAK® Power MOSFETs Combine Thermal Benefits of Double-Sided Cooling Package with On-Resistance
Down To 1.4 Milliohms
|
|
January 15,
2007
|
|
New Vishay Silconix N-Channel PowerPAK® ChipFET® MOSFETs Offer Same 3-W Maximum Power Dissipation as Larger SO-8 in 81 % Smaller
Footprint
|
|
November 21,
2005
|
|
New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal
Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms
|
|
June 15,
2005
|
|
New Vishay Siliconix P-Channel Load Switches Are Industry's First Designed for On-Resistance Ratings at 1.5 V
|
|
April 27,
2005
|
|
New Vishay Siliconix -150-V and -200-V P-Channel Power MOSFETs Save Space for Active Clamp Configurations
|
|
April 20,
2005
|
|
New Vishay Siliconix 40-V and 60-V MOSFETs Feature Industry's First Combination of High 3.4-V Threshold Voltage and Low 2.7-mΩ
On-Resistance for High-Temperature Automotive Applications
|
|
August 11,
2004
|
|
Vishay's New Common-Drain MICRO FOOT® Power MOSFETs Offer On-Resistance Comparable to TSSOP-8 Devices in 81% Smaller Chipscale
Package
|
|
May 26,
2004
|
|
New Chipscale P-Channel MOSFET Sets New Record at 48 Milliohms
|
|
April 07,
2004
|
|
Vishay Launches 240-Milliohm, 200-V Switching MOSFET in 3.3-mm by 3.3-mm PowerPAK® 1212-8
|
|
March 29,
2004
|
|
Siliconix Targets Automotive 12-V Boardnet With New P-Channel −40-V and −60-V TrenchFET® Power MOSFETs
|
|
January 28,
2004
|
|
Vishay's New 250-V N-Channel TrenchFET® Power MOSFETs Offer Up to 50% Improved On-Resistance in SO-8 and D2PAK Footprints
|
|
July 16,
2003
|
|
Vishay's New 20-V VDS/20-V VGS MOSFETs Provide On-Resistance Down to 3.2 mΩ for Efficient Desktop and Server Core DC-to-DC
Converters
|
|
April 21,
2003
|
|
Siliconix Launches Complete Family of TrenchFET® Power MOSFETs Built on Advanced P-Channel Technology
|
|
October 04,
2002
|
|
New PowerPAK™ SO-8 Power MOSFETs Provide Industry-Best Specifications for Point of Load DC-to-DC Conversion Applications
|
|
August 16,
2002
|
|
Temperature- and Current-Sensing TrenchFETs® in Thermally Enhanced D2PAK Package Improve Performance and Reliability, Save
Board Space, and Lower Costs
|
|
August 07,
2002
|
|
New Vishay Siliconix Power MOSFETs For Battery Protection Set New Records for On-Resistance in Three Package Types
|
|
May 06,
2002
|
|
Siliconix Launches Record-Breaking Chipscale MOSFET and Analog Switch: Devices Are Industry's First Rated for 1.8-V Operation
|
|
March 25,
2002
|
|
TrenchFETs® in New Thermally Enhanced D2PAK Package Save Board Space and Lower Costs With Industry's Best Thermal Performance
|
|
March 15,
2002
|
|
New PowerPAK™ SO-8 Power MOSFETs With Supereior Thermal Performance Save Space and Power, Lowering Costs in DC-to-DC Conversion
Applications
|
|
February 22,
2002
|
|
New Low-Side 30-V Power MOSFET and Companion High-Side Device Provide Industry-Best Specifications for High Efficiency in
DC-to-DC Conversion Applications
|
|
August 22,
2001
|
|
New Siliconix Power MOSFETs for Isolated DC/DC Conversion Meet Higher Voltage Demands in Low-Profile PowerPAK™ Package
|
|
May 24,
2001
|
|
New TrenchFET® MOSFETs Break Performance Records in Tiny LITTLE FOOT® SC-89 and SC-75 Packages
|
|
May 11,
2001
|
|
New LITTLE FOOT® Power MOSFETs for Isolated DC-to-DC Converters are PWM Optimized
|
|
October 19,
2000
|
|
Siliconix's New Power MOSFETs for DC/DC Conversion Serve Applications From High-End Notebooks to Game Stations
|
|
Sales, Technical Questions...
